www.berex.com berex, inc. 1735 north 1 st street #302 san jose, ca 95112 tel. (408) 452 - 5595 septem ber 2011 specifications are subject to change without notice. ? berex 2011 rev. 1. 2 BCP080T high efficiency heterojunction power fet chip (.25 m x 8 00 m) the berex bcp0 8 0 t is a gaas power phemt with a nominal 0. 2 5 micron gate length and 8 00 micron gate width making the product ideally suited for applications where high - gain and medium power in the 1000 mhz to 26.5 ghz frequency range are required. the product may be used in either wideband (6 - 18 ghz) or narrow - band applications. the bcp0 8 0 t is produced using state of the art metallization with si 3 n 4 passivation and is screened to assure reliability. product features ? 30 dbm typical output power ? 1 0.5 db typical gain @ 12 ghz ? 0. 2 5 x 8 00 micron recessed gate applications ? commercial ? military / hi - rel . ? test & measurement electrical characteristic ( tuned for power ) t a = 25 c symbol parameter/test conditions test freq . min . typical max . unit p 1db output power @ p 1db (v ds = 8 v, i ds = 50% i dss ) 12 gh z 18 ghz 29.0 30.0 30.0 dbm g 1db gain @ p 1db (v ds = 8 v, i ds = 50% i dss ) 12 gh z 18 ghz 9.5 10.5 7.5 db pae pae @ p 1db (v ds = 8 v, i ds = 50% i dss ) 12 gh z 18 ghz 60 55 % i dss saturated drain current (v gs = 0v, v ds = 1.0 v) 16 0 240 3 2 0 ma g m transconductance (v ds = 3v, v gs = 50% i dss ) 32 0 ms v p pinch - off voltage (i ds = 800 a, v ds = 2 v) - 2.5 - 1.1 - 0.5 v bv gd drain breakdown voltage (i g d = 0.8 ma, source open) - 1 5 - 1 2 .0 v bv gs source breakdown voltage (i g = 0.8 ma, drain open) - 1 3 v r th thermal resistance (au - sn eutectic attach) 61 c/w
www.berex.com berex, inc. 1735 north 1 st street #302 san jose, ca 95112 tel. (408) 452 - 5595 septem ber 2011 specifications are subject to change without notice. ? berex 2011 rev. 1. 2 BCP080T electrical characteristic ( tuned for gain ) t a = 25 c symbol parameter/test conditions test freq . min . typical max . unit p 1db output power @ p 1db (v ds = 8 v, i ds = 50% i dss ) 12 gh z 18 ghz 27.5 28.5 28.0 dbm g 1db gain @ p 1db (v ds = 8 v, i ds = 50% i dss ) 12 gh z 18 ghz 10.5 11.5 8.0 db pae pae @ p 1db (v ds = 8 v, i ds = 50% i dss ) 12 gh z 18 ghz 58 45 % i dss saturated drain current (v gs = 0v, v ds = 1.0v) 16 0 240 3 2 0 ma g m transconductance (v ds = 3v, v gs = 50% i dss ) 32 0 ms v p pinch - off voltage (i ds = 8 00 a, v ds = 2 v) - 2.5 - 1.1 - 0.5 v b v gd drain breakdown voltage (i g d = 0.8 ma, source open) - 1 5 - 12.0 v bv gs source breakdown voltage (i g = 0.8 ma, drain open) - 1 3 v r th thermal resistance (au - sn eutectic attach) 61 c/w maximum rating (t a = 25 c) symbols parameters absolute continuous v ds v gs i ds i gsf p in t ch t stg p t drain - source voltage gate - source voltage drain current forward gate current input power channel temperature storage temperature total power dissipation 12 v - 6 v i dss 4 0 ma 2 7 dbm 175 c - 60 c - 150 c 3.0 w 8 v - 3 v i dss 7 ma @ 3db compression 150 c - 60 c - 150 c 2.5 w exceeding any of the above maximum ratings will result in reduced mttf and may cause permanent damage to the device.
www.berex.com berex, inc. 1735 north 1 st street #302 san jose, ca 95112 tel. (408) 452 - 5595 septem ber 2011 specifications are subject to change without notice. ? berex 2011 rev. 1. 2 BCP080T p in _p out /gain, pae (12 ghz) frequency = 12ghz v ds = 8 v, i ds = 50% i dss ( tune d for power) frequency = 12ghz v ds = 8 v, i ds = 50% id ss ( tune d for gain) p in _p out /gain, pae (18 ghz) frequency = 18ghz v ds = 8 v, i ds = 50% i dss (tuned for power) frequency = 18ghz v ds = 8 v, i ds = 50% id ss (tuned for gain)
www.berex.com berex, inc. 1735 north 1 st street #302 san jose, ca 95112 tel. (408) 452 - 5595 septem ber 2011 specifications are subject to change without notice. ? berex 2011 rev. 1. 2 BCP080T s - parameter ( v ds = 8v, i ds = 50% i dss ) freq . [ g hz] s11 [ mag ] s11 [ang . ] s21 [ mag ] s21 [ang . ] s12 [ mag ] s12 [ang . ] s22 [ mag ] s22 [ang . ] 1 0.88 - 76.19 15.20 133.42 0.024 52.92 0.33 - 48.85 2 0.80 - 122.05 10.28 107.10 0.026 39.88 0.23 - 79.11 3 0.78 - 150.41 7.46 90.51 0.028 32.53 0.18 - 100.71 4 0.78 - 169.11 5.73 78.17 0.032 27.33 0.15 - 118.62 5 0.78 177.02 4.62 67.37 0.033 26.98 0.15 - 135.40 6 0.79 165.27 3.82 57.85 0.037 26.66 0.16 - 148.85 7 0.81 156.52 3.20 49.39 0.039 26.35 0.18 - 160.17 8 0.82 147.81 2.79 41.06 0.040 27.57 0.20 - 167.44 9 0.84 140.62 2.44 33.85 0.045 26.68 0.22 - 176.73 10 0.84 134.26 2.17 26.58 0.048 26.40 0.24 177.83 11 0.86 126.33 1.94 18.60 0.052 24.32 0.26 171.10 12 0.87 119.77 1.73 10.95 0.054 22.92 0.29 165.39 13 0.89 114.17 1.56 4.42 0.056 20.74 0.32 158.94 14 0.89 107.48 1.41 - 3.40 0.058 17.25 0.35 152.81 15 0.90 102.39 1.24 - 10.36 0.061 15.12 0.39 146.64 16 0.92 98.18 1.12 - 16.82 0.062 12.32 0.44 140.53 17 0.93 93.38 0.99 - 24.48 0.063 7.68 0.48 135.58 18 0.93 92.33 0.86 - 28.98 0.065 8.39 0.52 130.41 19 0.93 90.25 0.76 - 34.74 0.064 6.46 0.56 125.87 20 0.94 86.43 0.67 - 40.26 0.063 6.69 0.61 122.41 21 0.95 87.08 0.57 - 43.33 0.064 4.00 0.64 119.62 22 0.94 88.18 0.51 - 46.45 0.063 3.40 0.66 117.23 23 0.94 87.44 0.44 - 49.43 0.064 2.63 0.70 115.29 24 0.94 90.11 0.39 - 50.10 0.064 1.51 0.73 114.62 25 0.94 91.60 0.35 - 52.21 0.061 4.83 0.75 113.64 26 0.95 90.36 0.31 - 52.11 0.058 10.58 0.76 114.36 note: s - parameters include bond wires. reference planes are at edge of substrates shown on wire bonding information figure below .
www.berex.com berex, inc. 1735 north 1 st street #302 san jose, ca 95112 tel. (408) 452 - 5595 septem ber 2011 specifications are subject to change without notice. ? berex 2011 rev. 1. 2 BCP080T wire bonding information using 1 mil . diameter, au bonding wires. 1. gate to input transmission line - length and height : 600 m x 250 m - number of wire (s) : 1 2. drain to output transmission line - length and height : 400 m x 250 m - number of wire(s) : 1 3. source to ground plate - length and height : 250 m x 300 m - number of wire(s) : 4 disclaimer berex reserves the right to make changes without further notice to any products herein to improve reliability, function or design. berex does not assume any liability arising out of the application or use of any product or circuit described herein. life support policy berex products are not authorized for use as critical co mponents in life support devices without the express written approval of berex. 1. life support devices or systems are devices or systems which (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labeli ng, can be reasonably expected to result in significant injury to the user. 2. a critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or syst em, or to affect its safety or effectiveness.
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